| 摘要 |
PROBLEM TO BE SOLVED: To provide: a chemical mechanical polishing pad by which both of the increase in the flatness of a face to be polished in CMP, and the reduction in polishing defect (i.e. a scratch) can be achieved; and a chemical mechanical polishing method by use of such a chemical mechanical polishing pad.SOLUTION: A chemical mechanical polishing pad according to the present invention comprises a polishing layer including a crosslinked polymer. The crosslinked polymer is a polymer produced by crosslinking (A) a hydroxyl group-containing polymer by (B) an epoxy group-containing compound. |
