| 摘要 |
<p>The present invention relates to a nitride semiconductor ultraviolet light-emitting device capable of improving electrical characteristics and photoconversion efficiency by forming, on an exposed surface of an n-type semiconductor layer, an n-electrode forming layer capable of enhancing characteristics of contact with an n-electrode. To this end, the nitride semiconductor ultraviolet light-emitting device of the present invention comprises an n-type semiconductor layer, an active layer and a p-type semiconductor layer which are sequentially stacked on a substrate, and is equipped with an n-type electrode and a p-type electrode so as to apply electric current, wherein as a part of the p-type semiconductor layer, the active layer and the n-type layer are etched, a part or the whole of the exposed surface of the exposed n-type semiconductor layer is equipped with an n-electrode forming layer, and an n-type metal layer is formed on the upper side of the exposed side of the n-type semiconductor layer so as to cover the n-electrode forming layer, the n-electrode forming layer being configured to have lower band-gap energy than the n-type semiconductor layer.</p> |
