| 摘要 |
A power semiconductor device according to an embodiment of the present invention comprises; a capacitor; a first power semiconductor module which is combined to the upper side of the capacitor by the soldering; and a second power semiconductor module which combined to the lower side of the capacitor by the soldering. According to the present invention, the capacitor is combined to a power semiconductor with the shortest distance because the capacitor is embedded in a power semiconductor module. Therefore, the size of surge voltage by parasitic inductance can be minimized and the use area of the power semiconductor can be expanded. |
