发明名称 |
FREQUENCY TUNING FOR DUAL LEVEL RADIO FREQUENCY (RF) PULSING |
摘要 |
Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power. |
申请公布号 |
US2015130354(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201414537037 |
申请日期 |
2014.11.10 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LERAY Gary;TODOROW Valentin Nikolov |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
1. A method for frequency tuning in process chambers using dual level pulsed power, the method comprising:
providing a first pulsed power at a first frequency by an RF power source for a first period of time while the first frequency is adjusted to a second frequency to achieve a desired impedance at the first pulsed power between the RF power source and a load, wherein the first frequency is a last known tuned frequency at the first pulsed power; storing the second frequency as the last known tuned frequency at the first pulsed power; providing a second pulsed power at a third frequency by the RF power source for a second period of time while the third frequency is adjusted to a fourth frequency to achieve a desired impedance at the second pulsed power between the RF power source and the load, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power; and storing the fourth frequency as the last known tuned frequency at the second pulsed power. |
地址 |
Santa Clara CA US |