发明名称 |
DATA RETENTION DETECTION TECHNIQUES FOR A DATA STORAGE DEVICE |
摘要 |
A data storage device includes a non-volatile memory and a controller. A method includes writing an indication of a first error rate of a first set of bits to the non-volatile memory. The first set of bits is sensed from a word line of the non-volatile memory. The word line is sensed to generate a second set of bits in response to a first power-on event being initiated at the data storage device after writing the indication of the first error rate to the non-volatile memory. The method further includes setting a data retention flag in response to a difference between the first error rate and a second error rate associated with the second set of bits satisfying a threshold. |
申请公布号 |
US2015135023(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201314080655 |
申请日期 |
2013.11.14 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
MEKHANIK EVGENY;AHARONOV ARSENIY;SHARON ERAN |
分类号 |
G11C16/34;G11C16/04;G06F11/07;G11C16/28 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
in a data storage device including a non-volatile memory and a controller, performing by the controller:
writing to the non-volatile memory an indication of a first error rate of a first set of bits, the first set of bits sensed from a word line of the non-volatile memory;in response to a first power-on event being initiated at the data storage device after writing the indication of the first error rate to the non-volatile memory, sensing the word line to generate a second set of bits; andin response to a difference between the first error rate and a second error rate associated with the second set of bits satisfying a threshold, setting a data retention flag. |
地址 |
Plano TX US |