发明名称 DATA RETENTION DETECTION TECHNIQUES FOR A DATA STORAGE DEVICE
摘要 A data storage device includes a non-volatile memory and a controller. A method includes writing an indication of a first error rate of a first set of bits to the non-volatile memory. The first set of bits is sensed from a word line of the non-volatile memory. The word line is sensed to generate a second set of bits in response to a first power-on event being initiated at the data storage device after writing the indication of the first error rate to the non-volatile memory. The method further includes setting a data retention flag in response to a difference between the first error rate and a second error rate associated with the second set of bits satisfying a threshold.
申请公布号 US2015135023(A1) 申请公布日期 2015.05.14
申请号 US201314080655 申请日期 2013.11.14
申请人 SANDISK TECHNOLOGIES INC. 发明人 MEKHANIK EVGENY;AHARONOV ARSENIY;SHARON ERAN
分类号 G11C16/34;G11C16/04;G06F11/07;G11C16/28 主分类号 G11C16/34
代理机构 代理人
主权项 1. A method comprising: in a data storage device including a non-volatile memory and a controller, performing by the controller: writing to the non-volatile memory an indication of a first error rate of a first set of bits, the first set of bits sensed from a word line of the non-volatile memory;in response to a first power-on event being initiated at the data storage device after writing the indication of the first error rate to the non-volatile memory, sensing the word line to generate a second set of bits; andin response to a difference between the first error rate and a second error rate associated with the second set of bits satisfying a threshold, setting a data retention flag.
地址 Plano TX US