| 主权项 |
1. A solid-state image sensor comprising a plurality of pixels arranged to form a matrix, the pixels including at least a first pixel configured to detect light in a first wavelength range and a second pixel configured to detect light in a second wavelength range, the second wavelength range including a wavelength range on a longer-wavelength side than the first wavelength range,
wherein each of the first pixel and the second pixel includes a photoelectric converter, a floating diffusion portion, a transfer transistor configured to transfer charges from the photoelectric converter to the floating diffusion portion, and an amplifier transistor configured to output a signal corresponding to a potential of the floating diffusion portion, the first pixel and the second pixel belong to a same row, a transfer control line configured to control the transfer transistor of the first pixel and a transfer control line configured to control the transfer transistor of the second pixel are provided independently, and the solid state image sensor comprises a control portion configured to supply a control signal to the transfer transistor such that a charge accumulation period of the first pixel is different from a charge accumulation period of the second pixel. |
