VIA-FUSE WITH LOW DIELECTRIC CONSTANT

摘要

In an embodiment of the present invention, a semiconductor device comprises a non-fuse area that has a non-fuse via, a non-fuse line, and a non-fuse dielectric stack. The semiconductor device further comprises a fuse area that has a fuse via, a fuse line, and a fuse dielectric stack. The fuse dielectric stack comprises at least a first dielectric and a second dielectric material. The fuse via is at least partially embedded in the first dielectric material and the fuse line is embedded in the second dielectric material.