| 发明名称 |
SELECTIVE FIN-SHAPING PROCESS |
| 摘要 |
A method of forming a fin field-effect transistor (FinFET) includes forming a plurality of fins on a substrate. The method further includes forming an oxide layer on the substrate, wherein a bottom portion of each fin of the plurality of fins is embedded in the oxide layer, and the bottom portion of each fin of the plurality of fins has substantially a same shape. The method further includes shaping at least one fin of the plurality of fins, wherein a top portion of the at least one fin has a different shape from a top portion of another fin of the plurality of fins. |
| 申请公布号 |
US2015132911(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201514598276 |
申请日期 |
2015.01.16 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
WANN Clement Hsingjen;YEH Ling-Yen;SHIH Chi-Yuan;LIN Yi-Tang;CHANG Chih-Sheng;LIU Chi-Wen |
| 分类号 |
H01L21/8234;H01L21/311;H01L21/762;H01L21/265 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a fin field-effect transistor (FinFET), the method comprising:
forming a plurality of fins on a substrate; forming an oxide layer on the substrate, wherein a bottom portion of each fin of the plurality of fins is embedded in the oxide layer, and the bottom portion of each fin of the plurality of fins has substantially a same shape; and shaping at least one fin of the plurality of fins, wherein a top portion of the at least one fin has a different shape from a top portion of another fin of the plurality of fins. |
| 地址 |
Hsinchu TW |
