| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal substrate such that spiral dislocation generated in a semicircular region on one side of a substrate is less than spiral dislocation generated in the remaining semicircular region and spiral dislocation is partially reduced, and a method of manufacturing the silicon carbide single crystal substrate by a sublimation recrystallization method.SOLUTION: There is provided a silicon carbide single crystal substrate 8 that is cut out of a bulk silicon carbide single crystal grown by a sublimation recrystallization method, and characterized in that the average value of dislocation density of spiral dislocation 6 observed at a plurality of measurement points in a semicircular region 8a on one side as a half of the substrate 8 is 80% or less of the average value of spiral dislocation density observed at a plurality of measurement points in the remaining semicircular region 8b. The substrate 8 can be manufactured by using a seed crystal made of an SiC single crystal and having a proper OFF angle to a (0001) plane, and growing the seed crystal while changing growth atmospheric pressure in steps, and a high-performance SiC device can be manufactured by separately devices in the SiC single crystal substrate as long as the substrate is partially reduced in spiral dislocation. |
