发明名称 |
FinFET Device Structure and Methods of Making Same |
摘要 |
Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further includes forming a second dielectric layer on the first dielectric layer and the first hardmask portion, forming a third dielectric layer on the second dielectric layer, and etching the third dielectric layer and a portion of the second dielectric layer to form a first and second spacer on opposite sides of the first hardmask portion. |
申请公布号 |
US2015132910(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201414537631 |
申请日期 |
2014.11.10 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Yu Chao;Wu Cheng-Han;Liu Eric Chih-Fang;Chen Ryan Chia-Jen;Chen Chao-Cheng |
分类号 |
H01L29/66;H01L21/311;H01L21/02 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Hsin-Chu TW |