发明名称 MANUFACTURING METHOD OF THIN FILM AND METAL LINE FOR DISPLAY USING THE SAME, THIN FILM TRANSISTOR ARRAY PANEL, AND METHOD FOR MANUFACTURING THE SAME
摘要 A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.
申请公布号 US2015129885(A1) 申请公布日期 2015.05.14
申请号 US201514605749 申请日期 2015.01.26
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KIM Byeong-Beom;PARK Je-Hyeong;YOUN Jae-Hyoung;SONG Jean-Ho;KIM Jong-In
分类号 H01L27/12;H01L23/482 主分类号 H01L27/12
代理机构 代理人
主权项 1. A metal wiring for a display panel, the metal wiring comprising: a silicon layer formed on a substrate; a barrier layer formed on the silicon layer; and a copper wire formed on the barrier layer, wherein the barrier layer comprises a metal having an amorphous structure, and the metal comprises at least one of titanium, tantalum, and molybdenum.
地址 YONGIN-CITY KR