| 发明名称 |
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor storage device including a memory cell array including a memory cell and a circuit element including first wirings and a selection element, the first wirings having a wiring width smaller than a resolution limit of an exposure apparatus. The first wirings extend in a first direction and are aligned in a second direction crossing with the first direction. A second wiring, being one of the first wirings, is cut by at least one cut region. The first wiring adjacent to the second wiring in the second direction extends continuously in the first direction in a portion adjacent to the cut region in the second direction. |
| 申请公布号 |
US2015131382(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201414188927 |
申请日期 |
2014.02.25 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIMENO Yoshiaki |
| 分类号 |
H01L21/308;H01L21/033;G11C16/04;H01L21/311 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor storage device comprising:
a memory cell array including a memory cell; and a circuit element including first wirings and a selection element, the first wirings having a wiring width smaller than a resolution limit of an exposure apparatus; wherein the first wirings extend in a first direction and are aligned in a second direction crossing with the first direction, and wherein a second wiring, being one of the first wirings, is cut by at least one out region, and wherein the first wiring adjacent to the second wiring in the second direction extends continuously in the first direction in a portion adjacent to the cut region in the second direction. |
| 地址 |
Minato-ku JP |
