| 摘要 |
A back contact solar cell includes a solar cell substrate, an intrinsic layer, a second conductive type semiconductor layer and an electrode layer. The solar cell substrate includes a substrate body doped with a first conductive type semiconductor and a plurality of first conductive type semiconductor doped regions. The first conductive type semiconductor doped region is formed on a back side of the substrate body. The intrinsic layer is formed on the back side, and includes a plurality of first openings to expose the first conductive type semiconductor doped regions. The second conductive type semiconductor layer is deposited on the intrinsic layer, and includes a plurality of second openings correspond the first openings. The electrode layer includes a plurality of first electrode regions and a second electrode region. The first electrode regions are disposed on the first conductive type semiconductor doped regions. The second electrode regions are disposed on the second conductive type semiconductor layer, and separated with the first electrode regions. |
| 主权项 |
1. A back contact solar cell, comprising:
a solar cell substrate, including:
a substrate body, having a front side and a back side opposite to the front side, and doped with a first conductive type semiconductor of a first doping concentration; anda plurality of first conductive type semiconductor doped regions, spaced apart and formed on the back side of the substrate body, doped with the first conductive type semiconductor of a second doping concentration, and the second doping concentration being greater than the first doping concentration; an intrinsic layer, formed on the back side of the substrate body and on the first conductive type semiconductor doped regions, wherein the intrinsic layer has a plurality of first openings to expose the first conductive type semiconductor doped regions; a second conductive type semiconductor layer, formed on the intrinsic layer, and having a plurality of second openings corresponding to the first openings, and a width of the second opening being not smaller than that of the corresponding first opening; and an electrode layer, including:
a plurality of first electrode regions, electrically connected to the first conductive type semiconductor doped region through the first openings and separated from the second conductive type semiconductor layer; anda plurality of second electrode regions, spaced apart and formed on the second conductive type semiconductor layers and separated from the first electrode regions. |
