| 发明名称 |
Semiconductor Device and Method for Forming a Semiconductor Device |
| 摘要 |
A semiconductor device includes at least one ohmic contact region between a semiconductor substrate of the semiconductor device and an electrically conductive structure arranged adjacent to the semiconductor substrate. Further, the semiconductor device includes at least one Schottky contact region between the semiconductor substrate of the semiconductor device and the electrically conductive structure. The at least one ohmic contact region is arranged adjacent to the at least one Schottky contact region. The semiconductor substrate includes a first doping layer arranged adjacent to the electrically conductive structure. An average doping concentration of the surface region of the first doping layer in an area of the at least one ohmic contact region differs from an average doping concentration of the surface region of the first doping layer in an area of the at least one Schottky contact region by less than 10%. |
| 申请公布号 |
US2015130013(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201314080098 |
申请日期 |
2013.11.14 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Hüsken Holger;Mauder Anton;Schulze Hans-Joachim;Rösner Wolfgang;Schulze Holger |
| 分类号 |
H01L29/872;H01L29/47;H01L29/66 |
主分类号 |
H01L29/872 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
at least one ohmic contact region between a semiconductor substrate of the semiconductor device and an electrically conductive structure arranged adjacent to the semiconductor substrate; and at least one Schottky contact region between the semiconductor substrate of the semiconductor device and the electrically conductive structure, wherein the at least one ohmic contact region is arranged adjacent to the at least one Schottky contact region, wherein the semiconductor substrate comprises a first doping layer arranged adjacent to the electrically conductive structure, wherein an average doping concentration of a surface region of the first doping layer in an area of the at least one ohmic contact region differs from an average doping concentration of the surface region of the first doping layer in an area of the at least one Schottky contact region by less than 10% of the average doping concentration of the surface region of the first doping layer in the area of the at least one Schottky contact region. |
| 地址 |
Neubiberg DE |
