摘要 |
Back-contact substrate (1) for a photovoltaic cell, comprising a carrier substrate (2) and an electrode coating (6). The electrode coating comprises:
- a metallic thin film (8);
- a barrier to selenization thin film (10) for protecting the metallic thin film (8), the barrier to selenization thin film (10) having a thickness of at most 50 nm, preferably at most 30 nm, preferably at most 20 nm; and
- on the barrier to selenization thin film(10), an upper thin film (12) based on a metal M capable of forming, after sulphurization and/or selenization, an ohmic contact thin film with a photoactive semiconducting material. The metallic thin film (8) is based on aluminum and has a thickness of at most 300nm, preferably at most 100 nm, preferably at most 90 nm, preferably at most 80 nm. |