| 摘要 |
A semiconductor light emitting element comprising: a buffer layer that is grown by using a growth substrate including ZnO, the buffer layer being made by using an AlGaInN-based material including In and being configured so that the growth surface thereof has a nitrogen polar plane; and an active layer that is formed on the buffer layer, the active layer being made by using an AlGaInN-based material including In and being configured so that the growth surface thereof has a group-III polar plane. |
