| 摘要 |
The present invention is a silicon wafer polishing method for setting a polishing time such that a predetermined polishing margin is obtained, polishing a silicon wafer in sliding contact with an abrasive cloth for a set polishing time while supplying an abrasive stored in a tank to the abrasive cloth, and repeating the polishing of the silicon wafers in a batch processing manner while collecting the supplied abrasive into the tank and circulating the abrasive therein, the silicon wafer polishing method comprising a step of previously recording in a database the polishing rate that changes with an increase in the number of batches after the abrasive cloth is dressed, and a step of, when the polishing time is set such that the predetermined polishing margin is obtained, setting the polishing time on the basis of the polishing rate that changes with an increase in the number of batches after the abrasive cloth is dressed and that has been recorded in the database. Consequently, a silicon wafer polishing method and polishing device which are capable of suppressing variations in polishing margin due to a change in polishing rate caused by a change in the dressed state of the abrasive cloth and controlling the finished thickness with high precision are provided. |
