发明名称 PLASMA PROCESSING APPARATUS
摘要 The ratio of input power during a pulse-on period to input power during a purse-off period can be arbitrarily controlled by a matching function of a matcher on a high-frequency power supply line supplying a high frequency of a continuous wave which does not modulate when power of one of two types of high frequencies supplied to a processing container is modulated to a pulse. An impedance sensor (96A) installed in a matcher of a plasma generation system comprises: a RF voltage detector (100) of a voltage sensor system, a voltage detection signal generating circuit (102), an arithmetic mean value calculating circuit (104), a weighted average value calculating circuit (106), and a moving average value calculating circuit (108); a RF current detector (110) of a current sensor system, a current detection signal generating circuit (112), an arithmetic mean value calculating circuit (114), a weighted average value calculating circuit (116), and a moving average value calculating circuit (118); and an impedance calculating circuit (120).
申请公布号 KR20150051879(A) 申请公布日期 2015.05.13
申请号 KR20140147222 申请日期 2014.10.28
申请人 TOKYO ELECTRON LIMITED;DAIHEN CORPORATION 发明人 KONNO HIROO;SHIMOMOTO TAKASHI
分类号 H05H1/46;H01L21/3065 主分类号 H05H1/46
代理机构 代理人
主权项
地址