发明名称 EMBEDDED NON-VOLATILE MEMORY CIRCUIT FOR IMPLEMENTING LOGIC FUNCTIONS ACROSS PERIODS OF POWER DISRUPTION
摘要 <p>A circuit having an autonomous ferroelectric memory latch (AML) is disclosed. An AML characterized by an AML input, an AML output, a first AML power contact, a second AML power contact and an AML state, and a first switch in series with one of the AML input or the AML output. The switch is positioned to prevent the state of the AML from changing when power is provided between the first and second AML power contacts, In one aspect of the invention, the circuit could include a second switch in series with the other of the AML input or the AML output and a latch in series with the AML input or the AML output. The latch is positioned such that a direct path back does not exist between the AML output and the AML input.</p>
申请公布号 EP2870604(A1) 申请公布日期 2015.05.13
申请号 EP20130813880 申请日期 2013.07.01
申请人 RADIANT TECHNOLOGIES, INC. 发明人 EVANS, JOSEPH, T.
分类号 G11C5/14;G11C7/10;G11C7/20;G11C7/24;G11C8/20;G11C11/22;G11C14/00;G11C16/22;G11C16/30;G11C19/00;H01L27/115;H03K3/356 主分类号 G11C5/14
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