发明名称 半導体製造装置および半導体製造方法
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device capable of efficiently performing annealing treatment, and a semiconductor manufacturing method.SOLUTION: A semiconductor manufacturing device of an embodiment comprises: a susceptor on which a substrate having a grain growing by microwave irradiation at least in a part thereof is formed; an irradiation unit which irradiates the substrate with a microwave; and a control unit which controls the irradiation unit so as to approximate a frequency of the microwave irradiated by the irradiation unit to a resonance frequency of the grain.
申请公布号 JP5717598(B2) 申请公布日期 2015.05.13
申请号 JP20110211655 申请日期 2011.09.27
申请人 株式会社東芝 发明人 大野 博司
分类号 H01L21/268;H01L21/20;H01L21/265;H05B6/64;H05B6/80 主分类号 H01L21/268
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