| 发明名称 | Semiconductor device with copper interconnects separated by air gaps | ||
| 摘要 | A semiconductor device including a plurality of copper interconnects. At least a first portion of the plurality of copper interconnects has a meniscus in a top surface. The semiconductor device also includes a plurality of air gaps, wherein each air gap of the plurality of air gaps is located between an adjacent pair of at least the first portion of the plurality of bit lines. | ||
| 申请公布号 | US9030016(B2) | 申请公布日期 | 2015.05.12 |
| 申请号 | US201314022864 | 申请日期 | 2013.09.10 |
| 申请人 | Sandisk Technologies Inc. | 发明人 | Purayath Vinod R.;Kai James K.;Pachamuthu Jayavel;Liang Jarrett Jun;Matamis George |
| 分类号 | H01L23/48;H01L23/532;H01L21/768 | 主分类号 | H01L23/48 |
| 代理机构 | The Marbury Law Group PLLC | 代理人 | The Marbury Law Group PLLC |
| 主权项 | 1. A semiconductor device, comprising: a plurality of copper interconnects, at least a first portion of the plurality of copper interconnects having a meniscus in a top surface; and a plurality of air gaps, wherein each air gap of the plurality of air gaps is located between an adjacent pair of at least the first portion of the plurality of copper interconnects; wherein the semiconductor device which contains the plurality of copper interconnects comprises a nonvolatile memory device; further comprising a conformal liner on sidewalls of at least the first plurality of copper interconnects, wherein the liner separates each of at least the first plurality of copper interconnects from two adjacent air gaps; and further comprising a cap located in the meniscus on the top surface of at least the first portion of the plurality of copper interconnects. | ||
| 地址 | Plano TX US | ||