发明名称 |
Through silicon via in n+ epitaxy wafers with reduced parasitic capacitance |
摘要 |
A semiconductor device includes an epitaxy layer formed on semiconductor substrate, a device layer formed on the epitaxy layer, a trench formed within the semiconductor substrate and including a dielectric layer forming a liner within the trench and a conductive core forming a through-silicon via conductor, and a deep trench isolation structure formed within the substrate and surrounding the through-silicon via conductor. A region of the epitaxy layer formed between the through-silicon via conductor and the deep trench isolation structure is electrically isolated from any signals applied to the semiconductor device, thereby decreasing parasitic capacitance. |
申请公布号 |
US9029988(B2) |
申请公布日期 |
2015.05.12 |
申请号 |
US201313743882 |
申请日期 |
2013.01.17 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Iyer Subramanian S.;Kerber Pranita;Khakifirooz Ali |
分类号 |
H01L29/40;H01L23/04;H01L29/80;H01L23/538;H01L23/48 |
主分类号 |
H01L29/40 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP ;Meyers Steven |
主权项 |
1. A semiconductor device comprising:
an epitaxy layer formed on a semiconductor substrate; a device layer formed on the epitaxy layer; an opening formed within the semiconductor substrate and including a dielectric layer forming a liner and a conductive core within the opening forming a signal through-silicon via, wherein the signal through-silicon via extends through the device layer and the epitaxy layer; and an isolating through-silicon via formed within the substrate and surrounding the signal through-silicon via, wherein the isolating through-silicon via extends through the device layer and the epitaxy layer, such that the isolating through-silicon via forms a ring around the signal through-silicon via, wherein a region of the epitaxy layer formed inside the ring between the isolating through-silicon via and the signal through-silicon via is electrically isolated from another region of the epitaxy layer that is formed outside the ring when a voltage is applied to the signal through-silicon via. |
地址 |
Armonk NY US |