Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound

摘要

Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N) and a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N). The IC device may further include a gate terminal and a gate dielectric layer disposed between the gate terminal and the barrier layer and/or between the gate terminal and the buffer layer. In various embodiments, the gate dielectric layer may include a fluoride- or chloride-based compound, such as calcium fluoride (CaF2).

主权项

1. An enhancement mode high electron mobility transistor (HEMT) device comprising:
a buffer layer disposed on a substrate, the buffer layer including a first nitride-based material; a barrier layer disposed on the buffer layer, the barrier layer including a second nitride-based material and having a bandgap energy that is greater than a bandgap energy of the buffer layer; a recess in the barrier layer that does not extend into the buffer layer; a gate dielectric layer disposed in the recess, the gate dielectric layer formed of calcium fluoride (CaF2), cadmium fluoride (CdF2), or potassium chloride (KCI); and a gate terminal disposed on the gate dielectric layer, wherein the gate dielectric layer is disposed between the gate terminal and the barrier layer or between the gate terminal and the buffer layer.