Quantum dot photo-field-effect transistor

摘要

Photo-field-effect transistor devices and associated methods are disclosed in which a photogate, consisting of a quantum dot sensitizing layer, transfers photoelectrons to a semiconductor channel across a charge-separating (type-II) heterointerface, producing a sustained primary and secondary flow of carriers between source and drain electrodes. The light-absorbing photogate thus modulates the flow of current along the channel, forming a photo-field effect transistor.

主权项

1. A photo-field effect transistor device comprising:
an electrically insulating substrate; source and drain electrodes provided on said substrate in a spaced relationship; a carrier-accepting semiconductor channel contacting said substrate between said source and drain electrodes, wherein said carrier-accepting semiconductor channel is in electrical communication with said source and drain electrodes; and a light absorbing quantum dot sensitizing layer contacting said carrier-accepting semiconductor channel, said quantum dot sensitizing layer producing photo-generated carriers under illumination of light within a selected optical bandwidth; wherein an interface between said quantum dot sensitizing layer and said carrier-accepting semiconductor channel forms a type II heterojunction configured to inject one type of said photo-generated carriers into said carrier-accepting semiconductor channel, thereby producing primary photocarriers within said carrier-accepting semiconductor channel; and wherein said carrier-accepting semiconductor channel is characterized by a mobility such that under application of a voltage difference between said source and drain electrodes and under illumination of said quantum dot sensitizing layer, a photocurrent is produced due to injection of the primary photocarriers and recirculation of secondary photocarriers.