Variable resistance memory device and operating method thereof

摘要

An operating method of a variable resistance memory device including a pre-read step which may include the steps of: reading a first reference cell using a first reference voltage; reading a second reference cell using a second reference voltage; and setting a third reference voltage based on the first and second reference voltages; and a main read step of reading a selected memory cell using the third reference voltage.

主权项

1. An operating method of a variable resistance memory device, comprising:
a pre-read step comprising the steps of: reading a first reference cell by comparing a voltage generated according to data stored in the first reference cell with a first reference voltage; reading a second reference cell by comparing a voltage generated according to data stored in the second reference cell with a second reference voltage; and setting a value between the first and second reference voltages as a third reference voltage; and a main read step of reading a selected memory cell by comparing a voltage generated according to data stored in the selected memory cell with the third reference voltage.