发明名称 |
Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer |
摘要 |
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of subregions. Each of the subregions has a magnetic thermal stability constant. The subregions are ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant. The magnetic thermal stability constant is such that the each of the subregions is magnetically thermally unstable at an operating temperature. The total magnetic thermal stability constant is such that the free layer is magnetically thermally stable at the operating temperature. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. |
申请公布号 |
US9029965(B2) |
申请公布日期 |
2015.05.12 |
申请号 |
US201314026386 |
申请日期 |
2013.09.13 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Chen Eugene;Apalkov Dmytro |
分类号 |
H01L27/22;H01L43/08;G11C11/16;H01L43/12 |
主分类号 |
H01L27/22 |
代理机构 |
Convergent Law Group LLP |
代理人 |
Convergent Law Group LLP |
主权项 |
1. A magnetic junction for use in a magnetic device comprising:
a pinned layer; a nonmagnetic spacer layer; and a free layer having a plurality of subregions, each of the plurality of subregions having a magnetic thermal stability constant, the plurality of subregions being ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant; the magnetic thermal stability constant being such that the each of the plurality of subregions is magnetically thermally unstable at an operating temperature, the total magnetic thermal stability constant being such that the free layer is magnetically thermally stable at the operating temperature; wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. |
地址 |
Gyeonggi-Do KR |