| 摘要 |
PROBLEM TO BE SOLVED: To increase performance of an image sensor.SOLUTION: In a solid state image pickup element, fluorine is introduced into an overlapping part of a gate electrode GE1 of an amplification transistor, which overlaps a channel region in planar view and fluorine is not introduced into a semiconductor substrate 1S. In particular, as shown in FIG. 20, patterning of a resist film FR1 is performed so as to open the over lapping part of the gate electrode GE1, which overlaps the channel region in planar view. By an ion implantation method using the resist film FR1 in which an opening OP1 is formed, fluorine is implanted into the gate electrode GE1 exposed from the opening OP1. |
