| 摘要 |
The present invention relates to an apparatus for treating a substrate, and more specifically, to an apparatus for treating a substrate using plasma. According to an embodiment of the present invention, the apparatus for treating the substrate comprises: a chamber having a processing space of which an upper surface is opened; a support unit arranged in the chamber and supporting the substrate; a dielectric assembly installed on the opened upper surface of the chamber and covering the opened upper surface; and a plasma source installed on an upper side of the dielectric assembly and having an antenna which generates plasma from gas supplied to the chamber, wherein the dielectric assembly comprises: a dielectric window; and a heating unit of a non-metal material installed on an upper part of the dielectric window and heating the dielectric window. |
