SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device capable of more stable operation.SOLUTION: A silicon carbide semiconductor device 1 comprises: a silicon carbide layer 11 which has a principal surface 11A and a principal surface 11B and includes a drift region 12 composing a part of the principal surface 11A and the principal surface 11B and a body region 13 contacting the drift region 12; a source electrode 40 and a Schottky electrode 80 which are arranged in contact with the principal surface 11A; and a drain electrode 70 arranged on the principal surface 11B side. In the silicon carbide semiconductor device 1, a MOSFET 1A and an SBD 1B are formed. Temperature dependency of on-resistance in the MOSFET 1A denotes the same tendency of temperature dependency of on-resistance in the SBD 1B.