发明名称 |
Method for removing photoresist |
摘要 |
A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides sufficient energy for the extra electrons caused by the ashing process to escape from the substrate, and the remaining photoresist and polymer are stripped with stripping solvents after the surface treatment.
|
申请公布号 |
US7335600(B2) |
申请公布日期 |
2008.02.26 |
申请号 |
US20040014395 |
申请日期 |
2004.12.15 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHIEN WEN-SHENG;HSIEH YEN-WU |
分类号 |
H01L21/312;H01L21/02;H01L21/302;H01L21/461 |
主分类号 |
H01L21/312 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|