| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a stress is applied to a channel formation region for improvement in current driving capability of a transistor, resulting in improved current driving capability and improved performance. <P>SOLUTION: Active regions (1c and 1d) of semiconductor substrates (1a and 1b) are divided by element separation insulating films (2 and 6a). NTr and PTr contain a channel formation region, a gate insulating film, gate electrodes (8a and 8b), a source/drain region, and a covered stress film. A gate length direction in the active region is <100>. A first tensile stress film 6a is formed as the element separation insulating film at both ends of the source/drain region of the NTr. A first compression stress film 2 is formed at a place other than both ends of the source/drain region. A first compression stress film 2 is formed at the element separation insulating film of the PTr, a second tensile stress film is formed at the NTr as the covered stress film, and a second compression stress film is formed at the PTr. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
