| 发明名称 |
SELECTIVE SIDEWALL GROWTH OF SEMICONDUCTOR MATERIAL |
| 摘要 |
A method of producing a bulk semiconductor material comprises the steps of providing a base comprising a substantially planar substrate having a plurality of etched nano/micro-structures located thereon, each structure having an etched, substantially planar sidewall, wherein the plane of each said etched sidewall is arranged at an oblique angle to the substrate, and selectively growing the bulk semiconductor material onto the etched sidewall of each nano/micro-structure using an epitaxial growth process. A layered semiconductor device may be grown onto the bulk semiconductor material. |
| 申请公布号 |
US2015125976(A1) |
申请公布日期 |
2015.05.07 |
| 申请号 |
US201314406194 |
申请日期 |
2013.06.07 |
| 申请人 |
NANOGAN LIMITED |
发明人 |
Wang Wang Nang |
| 分类号 |
H01L21/02;H01S5/022;H01L31/18;H01L21/308;H01L33/00 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of producing semiconductor material comprising the steps of:
(a) providing a base comprising a substantially planar substrate having a plurality of etched nano/micro-structures located thereon, each structure having at least one etched, substantially planar sidewall, wherein the plane of each said etched sidewall is arranged at an oblique angle to the substrate, and (b) selectively growing the semiconductor material onto the oblique etched sidewall of each nano/micro-structure using an epitaxial growth process. |
| 地址 |
Bath, Somerset GB |
