Semiconductor Devices Including Buried Channels

摘要

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an active region defined by a device isolation layer formed in a cell region, a transistor including a buried gate in the active region, a metal contact formed on the active region positioned at one side of the buried gate, a landing pad on the metal contact, a capacitor on the landing pad and electrically connected to the active region, and a metal oxide layer between the metal contact and the active region.

主权项

1. A semiconductor device comprising:
a cell region; a device isolation layer in the cell region; an active region defined by the device isolation layer; a buried gate in the active region; a metal contact on the active region and positioned adjacent the buried gate; a landing pad on the metal contact; a capacitor on the landing pad and electrically connected to the active region; and a metal oxide layer between the metal contact and the active region.