发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
摘要 |
The present invention relates to a semiconductor device and a method for forming the same and, more specifically, to a technology which forms a storage node contact. The semiconductor device of the present invention comprises: bit lines which are formed on a semiconductor substrate; a support film which is formed in the direction perpendicular to the bit lines; a first storage node contact which is formed on the bottom plate between the bit lines and support film; and a second storage node contact which is formed into a line shape separated by the support film on the first storage node contact and the upper side of the bit lines. |
申请公布号 |
KR20150048510(A) |
申请公布日期 |
2015.05.07 |
申请号 |
KR20130128665 |
申请日期 |
2013.10.28 |
申请人 |
SK HYNIX INC. |
发明人 |
YOON, JAE MAN;KIM, YOUNG BOG;CHUN, YUN SEOK;CHOI, WOONG;LEE, WOO JUN |
分类号 |
H01L21/28;H01L21/8242 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|