| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a highly reliable wiring structure for preventing diffusion of Cu into an interlayer insulator reliably, by forming a diffusion prevention film so as to cover the boundary of an adhesion layer and a Cu wiring reliably, by a relatively simple technique.SOLUTION: When manufacturing a wiring structure including an insulator 11, a wiring 16A containing Cu as the maximum component, and an adhesion layer 13 formed between the insulator 11 and the wiring 16A, an exposed part of the adhesion layer 13 from the insulator 11 is oxidized (oxygen plasma processing, ultraviolet light processing, ozone processing), and then a diffusion prevention film 17 is formed to cover the exposed part of the adhesion layer 13 subjected to oxidation from the insulator 11, and the exposed part of the wiring 16A from the insulator 11.</p> |
