SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A method of forming a semiconductor device includes forming a gate structure including a polysilicon gate and forming a capping spacer on a side surface of the gate structure to prevent parasitic epitaxial growth on the side surface of the polysilicon gate.

主权项

1. A method for fabricating a semiconductor device comprising:
forming a gate structure, in which a polysilicon gate and a hard mask are stacked and which includes an upper portion and a lower portion, on a substrate; forming a gate spacer on a side surface of the gate structure; forming a sacrificial layer, which surrounds a part of the gate spacer and the lower portion of the gate structure, on the substrate; forming a capping spacer on a side surface of the upper portion of the gate structure that projects beyond the sacrificial layer; and removing the sacrificial layer after forming the capping spacer.