| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing device and a substrate processing method, capable of easily removing an oxide film formed on a substrate.SOLUTION: A substrate processing device 30 of an embodiment includes: a process chamber 100 in which a processing space TS is formed in the inside thereof; a susceptor 140 which is located in the processing space TS and supports the substrate; a plasma generation unit 200 which includes a discharge space ES in which a plasma is generated, and supplies the plasma to the processing space TS; a source gas storage unit 330 which stores a source gas; a first gas supply line 310 which connects the plasma generation unit 200 and the source gas storage unit 330 and supplies the source gas to the discharge space ES; a second gas supply line 320 which is connected to the first gas supply line 310; and a steam generation unit 340 which is connected to the second gas supply line 320, generates steam, and supplies the generated steam to the second gas supply line 320. |
