| 摘要 |
The present invention is: a fluorinated hydrocarbon represented by the formula R-F (where in the formula, R represents an isobutyl group or a t-butyl group) and characterized by having a purity of at least 99.9 vol% and a total content of butenes of no greater than 1000 vol ppm; a use of the fluorinated hydrocarbon as a plasma etching gas; and a plasma etching method that, using the fluorinated hydrocarbon as a plasma etching gas, selectively plasma etches an inorganic nitride film laminated on silicon or a silicon oxide film. |
