| 发明名称 |
NONVOLATILE MEMORY SYSTEM |
| 摘要 |
A non-volatile memory system includes a NAND flash memory device including a first flash translation layer that performs a garbage collection operation, and a host device including a file system and a second flash translation layer that controls an operation of the NAND flash memory device by interacting with the file system. Here, the host device provides application data in an in-ordered form to the NAND flash memory device. Thus, the non-volatile memory system can perform a random write operation at high speed, and can minimize power consumption due to unnecessary data transfer. |
| 申请公布号 |
US2015127889(A1) |
申请公布日期 |
2015.05.07 |
| 申请号 |
US201314398009 |
申请日期 |
2013.04.18 |
| 申请人 |
THE-AIO INC. |
发明人 |
Hwang Sun-Mo |
| 分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory system, comprising:
a NAND flash memory device including a first flash translation layer that performs a garbage collection operation; and a host device including a file system and a second flash translation layer that controls an operation of the NAND flash memory device by interacting with the file system, wherein the host device provides application data in an in-ordered form to the NAND flash memory device. |
| 地址 |
Seongnam-si, Gyeonggi-do KR |
