| 摘要 |
<p>The present invention provide a method for manufacturing an SOI wafer which suppresses voids from being generated in an SOI wafer, especially, in an outer peripheral portion thereof to achieve high productivity. According to the present invention, in a method for manufacturing an SOI wafer in which an insulating layer is formed on at least one of two wafers serving as starting wafers, and the wafer is bonded to the other wafer without an adhesive, a wafer having such an outer peripheral configuration that a configuration change width is 0.1 mu m or less in a region of between 10 mm and 3 mm away from the outer periphery is used as the starting wafer. <IMAGE></p> |
