| 摘要 |
A method for manufacturing a semiconductor device (100) includes the following steps. A semiconductor substrate (16) is prepared which has a first main surface (16A) and a second main surface (16B) opposite to each other. The semiconductor substrate (16) is fixed on an adhesive tape (1) at the first main surface (16A) The semiconductor substrate (16) fixed on the adhesive tape (1) is placed in an accommodating chamber (31) While maintaining a temperature of the adhesive tape (1) at 100°C or more, a gas is exhausted from the accommodating chamber (31). After the step of exhausting the gas from the accommodating chamber (31), a temperature of the semiconductor substrate (16) is reduced. After the step of reducing the temperature of the semiconductor substrate (16), an electrode (15) is formed on a second main surface (16B) of the semiconductor substrate (16). In this way, there can be provided a method for manufacturing a semiconductor device so as to achieve reduced contact resistance between a semiconductor substrate and an electrode. |
