Semiconductor device

摘要

In a semiconductor device, a first contact-diffusion-layer is in a first well to be connected to the first well and extends in a channel width direction of a first transistor in a first well. A second contact-diffusion-layer is in the first well so as to be electrically connected to the first well and extends in a channel-length direction of the first transistor. A first contact on the first contact-diffusion-layer has a shape with a diameter in the channel-width direction larger than that in the channel-length direction when viewed from above the substrate. A second contact on the second contact-diffusion-layer has a shape with a diameter in the channel-width direction smaller than that of the first contact and a diameter in the channel-length direction almost equal to that of the first contact when viewed from above the substrate. A wiring is electrically connected to the first transistor through the second contact.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first well of a first conductivity type provided on the semiconductor substrate; a first transistor provided in the first well; a first contact diffusion layer provided in the first well so as to be electrically connected to the first well, the first contact diffusion layer extending in a channel width direction of the first transistor; a second contact diffusion layer provided in the first well so as to be electrically connected to the first well, the second contact diffusion layer extending in a channel length direction of the first transistor; a first contact provided on the first contact diffusion layer, the first contact having a shape with a diameter in the channel width direction larger than a diameter in the channel length direction when the first contact is viewed from above the semiconductor substrate; a second contact provided on the second contact diffusion layer, the second contact having a shape with a diameter in the channel width direction smaller than that of the first contact and a diameter in the channel length direction almost equal to that of the first contact when the second contact is viewed from above the semiconductor substrate; and a wiring electrically connected to at least a part of the first transistor through the second contact, wherein the second contact is not provided in the first contact diffusion layer.