Method for manufacturing semiconductor device

摘要

To provide a semiconductor device having improved reliability. A method of manufacturing a semiconductor device according to one embodiment includes a step of cutting, in a dicing region arranged between two chip regions adjacent to each other, a wafer along an extending direction of the dicing region. The dicing region has therein a plurality of metal patterns in a plurality of columns. In the step of cutting the wafer, one or more of the columns of metal patterns formed in a plurality of columns are removed, and the metal patterns of the column(s) different from the above-mentioned one or more of the columns are not removed.

主权项

1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) providing a semiconductor wafer having a first chip region, a second chip region arranged adjacent to the first chip region in plan view, a dicing region arranged between the first chip region and the second chip region in plan view, and a plurality of metal patterns arranged in a plurality of columns in the dicing region and arranged along an extending direction of the dicing region; and (b) cutting, in the dicing region of the semiconductor wafer, the semiconductor wafer along the extending direction of the dicing region, wherein the metal patterns have a first-column pattern arranged in a column closest to the first chip region and second column patterns arranged in a column further from the first chip region than the first column pattern, wherein a distance between the first chip region and the first column pattern is smaller than a distance between the first column pattern and the second column pattern and is smaller than a distance between the second chip region and the second column pattern, and wherein in the step (b), the first column pattern is not removed, but the second column pattern is removed.