Methods of forming a plurality of covered voids in a semiconductor substrate

摘要

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

主权项

1. A method of forming a plurality of covered voids in a semiconductor substrate, comprising:
depositing conductive material over an elemental-form silicon-containing material; etching a plurality of openings through the conductive material to the elemental-form silicon-containing material; after etching the openings, lining at least sidewalls of the plurality of openings with an insulative material; and selectively growing relative to the insulative material an elemental-form silicon-comprising material over the plurality of openings effective to bridge across the plurality of openings to cover the plurality of openings.