发明名称 Hall sensors having forced sensing nodes
摘要 Embodiments relate to forced spinning Hall sensors. In embodiments, forced Hall sensors can provide reduced residual offset, lower current consumption and improved or complete rejection of nonlinear backbias effects when compared with conventional approaches.
申请公布号 US9024629(B2) 申请公布日期 2015.05.05
申请号 US201213621336 申请日期 2012.09.17
申请人 Infineon Technologies AG 发明人 Motz Mario
分类号 G01R33/07 主分类号 G01R33/07
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A method comprising: applying a bias signal to a first node of a Hall plate; forcing a voltage level at second and third nodes of the Hall plate to a fixed value; measuring a differential signal in each of first and second feedback circuits coupled, respectively, to the second and third nodes; and determining a magnetic field output signal from the differential signals.
地址 Neubiberg DE