发明名称 Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
摘要 Disclosed is a substrate for a flexible device which, when a TFT is produced on a flexible substrate in which a metal layer and a polyimide layer are laminated, can suppress deterioration of the electrical performance of the TFT due to the surface irregularities of the metal foil surface and can suppress detachment or cracks of the TFT. Also disclosed is a substrate for a thin film element which has excellent surface smoothness and is capable of suppressing deterioration of the characteristics of thin film elements. Also disclosed are methods for manufacturing substrates for thin film elements.
申请公布号 US9024312(B2) 申请公布日期 2015.05.05
申请号 US201013499097 申请日期 2010.09.29
申请人 Dai Nippon Printing Co., Ltd. 发明人 Fukuda Shunji;Sakayori Katsuya;Arihara Keita;Ichimura Koji;Amagai Kei
分类号 H01L29/10;H01L51/00;H01L29/786;H01L27/12;H01L27/32;H01L51/52 主分类号 H01L29/10
代理机构 Ladas & Parry LLP 代理人 Ladas & Parry LLP
主权项 1. A substrate for a flexible device, comprising a metal foil; a planarizing layer that is formed on the metal foil and contains polyimide; and a contact adhesive layer that is formed on the planarizing layer and contains an inorganic compound, wherein the planarizing layer and the contact adhesive layer are formed partially over the metal foil, and the planarizing layer and the contact adhesive layer are formed in an area excluding the outer peripheral area of the metal foil.
地址 Tokyo-to JP
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