Method of patterning features of a semiconductor device

摘要

The present disclosure provides a method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.

主权项

1. A method, comprising:
providing a substrate having a semiconductor material and an insulator layer disposed on the semiconductor material; forming a plurality of silicon mandrel structures on the insulator layer having a substantially equal pitch, wherein each of the plurality of the silicon mandrel structures has a top surface and two opposing sidewall surfaces; oxidizing each of the plurality of the silicon mandrel structures to form a plurality of oxide spacers disposed at a substantially equal pitch, wherein the plurality of oxide spacers are formed on each of the two opposing sidewall surfaces of a residual silicon mandrel structure, the residual silicon mandrel structure remaining after the oxidizing process; and using the oxide spacers to pattern at least one of the insulator layer and the semiconductor material.