半导体装置;SEMICONDUCTOR DEVICE

摘要

本发明提供一种具有良好的电特性的半导体装置。在半导体层的通道宽度方向上的剖面中，半导体层包括：位于半导体层的一个侧部且一个端部与绝缘层接触的第一区域；位于半导体层的上部且一个端部与第一区域的另一个端部接触的第二区域；以及位于半导体层的另一个侧部并且一个端部与第二区域的另一个端部接触且另一个端部与绝缘层接触的第三区域，该三个区域都与闸极绝缘膜接触，在第二区域中与闸极绝缘膜之间的介面具有从一个端部至另一个端部依次连接有曲率半径为R1的区域、曲率半径为R2的区域以及曲率半径为R3的区域的凸形形状，R2比R1及R3大。; a second region of which one end portion is in contact with the other end portion of the first region and which is positioned at an upper portion of the semiconductor layer; and a third region of which one end portion is in contact with the other end portion of the second region and the other end portion is in contact with the insulating layer and which is positioned at the other side portion of the semiconductor layer. In the second region, an interface with a gate insulating film is convex and has three regions respectively having curvature radii R1, R2, and R3 that are connected in this order from the one end portion side toward the other. R2 is larger than R1 and R3.