Lattice-Mismatched Semiconductor Structures and Related Methods for Device Fabrication

摘要

Lattice-mismatched materials having configurations that trap defects within sidewall-containing structures.

主权项

1. A method comprising:
forming disconnected pillars on a substrate, the substrate comprising a first crystalline semiconductor material, the disconnected pillars comprising a non-crystalline material; and epitaxially growing a second crystalline semiconductor material on the substrate and between the disconnected pillars, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, dislocations arising from the lattice mismatch in the second crystalline semiconductor material terminating at the disconnected pillars, the second crystalline semiconductor material being grown over the disconnected pillars to form a continuous layer.