发明名称 |
APPARATUS AND METHODS FOR INSPECTING EXTREME ULTRA VIOLET RETICLES |
摘要 |
Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An inspection tool for detecting electromagnetic waveforms is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle. |
申请公布号 |
US2015117754(A1) |
申请公布日期 |
2015.04.30 |
申请号 |
US201514591181 |
申请日期 |
2015.01.07 |
申请人 |
KLA-Tencor Corporation |
发明人 |
Nasser-Ghodsi Mehran;Stokowski Stanley E.;Vaez-Iravani Mehdi |
分类号 |
G06T7/00 |
主分类号 |
G06T7/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of inspecting an extreme ultraviolet (EUV) reticle, the method comprising:
using an inspection tool for detecting electromagnetic waveforms to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, wherein the phase defect map identifies a position of each phase defect on the EUV reticle; after the pattern is formed on the EUV reticle, using a charged particle tool to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map; displaying or storing the phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect so as to facilitate analysis of whether to repair or discard the EUV reticle; after the pattern is formed on the EUV reticle, using a charged particle tool to obtain a pattern defect map for the EUV reticle, wherein the pattern defect map identifies a position of each pattern defect on the EUV reticle; and displaying and/or storing the pattern defect map in association with the phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect so as to further facilitate analysis of whether to repair or discard the EUV reticle. |
地址 |
Milpitas CA US |